Not necessarily. As transistor gate widths get smaller, parasitic capacitances become more of an issue. When you place metal traces as close to each other as is required for a sub-45 nm MOSFET gate, the capacitance between them becomes greater, thus actually reducing performance.
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Not necessarily. As transistor gate widths get smaller, parasitic capacitances become more of an issue. When you place metal traces as close to each other as is required for a sub-45 nm MOSFET gate, the capacitance between them becomes greater, thus actually reducing performance.