New Material for Spintronics Discovered
Cpt_Corelli writes "Researchers at Uppsala University and the Swedish Royal Institute of Technology have discovered a new material with properties suitable for creating spintronic devices at room temperature. Previously this was only believed to be available at very low temperatures. The material is a combination of zinc oxide and manganite. The breakthrough is the cover item of the October issue of Nature Materials. If this new material proves viable for production there is an enormous potential for smaller and faster processors. Could this be the beginning of a new era in processor development?"
In English: using the spin on individual electrons as a way of storing data.
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Incredible, really. I could store the Library of Congress in the LCD pixels represented by this:
Several times, I suspect.
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Does posting a link to the Nature Materials abstract count as karma whoring, when there's maybe only three people here who would understand what it says? ;)
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SLAP!!!
At least choose a fresh quote, how about... "Professor, without knowing precisely what spintronics is / Reading TFA, would you say it's time for our viewers to crack each other's heads open and feast on the goo inside?" Professor: "Yes I would, Kent.
Extended Warranty? How can I lose!
Md-doped means Manganese doped, not Manganite. Manganese is an element, Manganite is a mineral, MnO(OH).
Short answer: new method of using physical properties of electrons to reduce the travel time lag imposed by c and faster data state identification with less power could result.
Actually, it isn't that difficult. Our present systems use electrons (maximum speed is "c", or 186k/mi/sec) to carry or set data states (0,1). The electron has a few other properties that could be explored as a mechanism for data storage. This piece suggests that the "spin" state of an electron could become a viable mechanism (the system could work in less than super cold environments) for creating, reading and writing data states.
Ahem. I meant Mn-doped.
This article (from feb 2003) mentions that one of the major obstacles is making it work at room temperature which now has been achieved. Apparently this is a huge breakthrough.
Just to be clear, they aren't the first to look at Mn-doped ZnO as a spintronic material - people have been working on this material since the 1990s. Theoretical work by researchers at Tohoku University in Japan and others predicted that Md-doped ZnO could work at room temperature. After which, Others started work investigating the properties, and trying to improve the fabrication of the material to reach ferromagentism at higher temperatures.
The new material is said to keep it special abilities at temperatures up to 150 degrees C.
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