Intel Makes 45nm Chip
dolphinlover writes "Intel announced today that it created its first microchip using the 45 nanometer manufacturing process that it says will go into its processors in the second half of 2007. Intel said that this development provides it with a 'considerable lead over our competitors in the 45-nanometer generation'."
AMD has a co-development agreement with IBM and is planning to introduce 45nm parts in 2008.
AMD is nearly a full year behind Intel rolling out 65nm. Intel began volume production at 65nm last summer; AMD will be ramping up in the middle of this year.
While the parent may be joking, down below you'll find a lot of posts from AMD fanboys insisting that AMD must somehow be ahead. These fanboys are as clueless as the average tech magazine reporter. You can be quite certain that AMD will not be ramping up 45nm before Intel.
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Where's the 'ANY' key? I see Esk, Kitarl, and Pig-Up...
- AMD's new fab, Fab 36, supports 300mm wafers (like Intels have for some time).
- It uses a 90nm process (Intel and IBM have been on 65nm for some time).
- It will transition to 65nm by the end of 2006.
- It will use 45nm and 32nm processes by the end of the decade.
It doesn't really sound like Intel is playing catch-up here.I am TheRaven on Soylent News
molecule? This is a crystal we are talking about, so the entire wafer is a "molecule". An atom of Si is about .3nm across.
Intel's logic development is striving for a two-year cycle for each new process technology. This announcement of functional first-silicon (who knows how long they've actually had it) is part of that natural progression. Here's a table showing this announcement along with previous SRAM test chip announcements:
... it's not a table...
Process
Litho
Size
Date
P860
130 nm
18 Mbit
Mar 2000
P862
90 nm
50 Mbit
Feb 2002
P1264
65 nm
70 Mbit
Apr 2004
P1266
45 nm
153 Mbit
Jan 2006
Okay
Basically, instead of a solid slab of silicon on which you fab chip components, you put a solid slab of an insulator (sapphire / alumina for example; see silicon on sapphire wikipedia entry) down and then an insulating silicon oxide layer, and then a thin layer of silicon on which you fab the parts. Since what's under the parts is insulator, rather than more semiconductor, it reduces the energy of switching and reduces the time to switch a transistor. Also reduces radiation effects on the semiconductor and other good stuff.