'Universal' Memory Aims To Replace Flash/DRAM

siliconbits writes "A single 'universal' memory technology that combines the speed of DRAM with the non-volatility and density of flash memory was recently invented at North Carolina State University, according to researchers. The new memory technology, which uses a double floating-gate field-effect-transistor, should enable computers to power down memories not currently being accessed, drastically cutting the energy consumed by computers of all types, from mobile and desktop computers to server farms and data centers, the researchers say."

Comments

Re:But I like volatility!

[pushing-robot]

The first floating-gate in the stack is leaky, thus requiring refreshing about as often as DRAM (16 milliseconds). But by increasing the voltage its data value can be transferred to the second floating-gate, which acts more like a traditional flash memory, offering long-term nonvolatile storage.

Re:HP

[afidel]

Coming in 2013 according to this article from last year.