Toshiba Announces 3D Flash With 48 Layers
Lucas123 writes: Admitting it has bumped up against a 15 nanometer process wall, Toshiba announced it's focusing its efforts on three dimensional NAND using its Bit Cost Scalable technology (PDF) in order to increase capacity. It has dedicated a Japanese fab plant to it and developed 48-level 3D NAND, which bumps density up 33% over previous 3D NAND flash. The new 3D NAND will be able to store 128Gb of data per chip (16GB). Samsung has been mass producing 32-layer, triple-level cell (TLC) 3D NAND since last October and has incorporated it into some of its least expensive SSDs. Yesterday, Micron and Intel announced their own 32-layer 3D TLC NAND, which they claimed will lead to 10TB SSDs. While Toshiba's 3D NAND is multi-level cell (meaning it stores two bits per transistor versus three), the company does plan on developing a TLC version. Toshiba said it's not abandoning 15nm floating gate flash, but it will focus those efforts on lower capacity applications.
I think Toshiba are a bit late to the party here. I'm pretty sure Adobe's Flash has been 3D and included the ability to have many layers as you like for ages. Also, surely Toshiba can't release it's own version of Flash and give it the same name, right?