Analog & Digital Chips On The Same Silicon
jukal writes "Forbes.com writes: "Intel Corp. Monday announced plans to put some functions of analog and digital chips onto the same piece of silicon, its latest push into the communications semiconductor industry.", "which will be available early in 2004, could lead to a single-chip hand-held device that offers cellular phone, wireless-data-network and other connection services.", so, I quess this will be a competitor to the Texas Instruments' OMAP chip?"
A large section of embedded IC's have digital & analog on one chip. This has been done for years, just beacuse Intel are now doing it does n't make it news.
Single chip A and D have been available for at least 20 years. Hobbyists could buy single chip DVM kits and virtually ALL modems nowadays are Mixed A and D DSP chips.
Maybe its new for this application, but hybrid analog/digital chips have been around for a long time. Anybody ever hear of an analog-to-digital converter, or perhaps a digital-to-analog converter?
For that matter, inkjet printheads have quite a bit of both analog and digital circuitry on them, and they are made out of a single silicon die.
As ambitious as this effort is, there are significant barriers to getting it to work properly.
First off, analog and digital go hand in hand. All digital circuits are essentially analog circuits operating in a non-linear range. However, high-frequency analog circuitry is particularly problematic. Even basic structures such as phase locked loops and analog-to-digital converters can generate a lot of on-chip noise, both in the silicon substrate itself and through parasitic coupling above it. For basic PLLs, you need a good 50-100 microns of space between it and the nearest logic gate. Higher-speed cores will require structures like isolation tubs and additional spacing, and will significantly hamper placement and routing of the remaining circuitry. In other words, it is very easy to run out of die space and/or introduce signal integrity problems.
Speaking of signal integrity problems, the smaller geometry ICs (0.18um feature size and below) are having their signal integrity problems get worse and worse. Noise, delay, and wire melt are common problems that need repair in the digital circuitry, and noise margins are getting razor thin as it is. Power distribution is also going to be a nightmare, considering that every analog block will need its own power, probably multiple FC lands per block. The thing is, the CAD tools aren't there yet. Chips are still taped out with marginal signal integrity problems despite "simulating ok". Mind you, the analog portions are given a wide berth as I mentioned above, but who knows if they've fully covered this in the CAD tools or in the formulation of the design methodology. Lots of test vehicle chips will be needed.
Also, integrating passives can be precarious at best. Chips can have elements such as inductors and capacitors, but they're not area efficient at all, and you'll need external passive components anyway. And if you want power regulation for charging functions and battery regulation, fuggeddaboudit. These structures are particularly area inefficient. I don't think that this is what they're trying to do, but if you think we'll have literally everything integrated onto one chip, it won't happen.
I also have very little faith in the process technologies. If you look at some of the problems that 0.13um manufacturing has had with via voids and low-k dielectric brittleness that have been shown in the trade journals lately, I'd be very nervous with releasing something like this with just anyone's process. TI seems to be better for manufacturability, but TSMC or UMC? Don't count on it - yet. To accommodate the highly integrated nature of this device, they need a small process technology with very rigorous manufacturing capabilities to avoid some of these problems.
Finally, integrating analog RF and digital requires advanced packaging technologies. If I've got the output to an antenna block in my chip package, how do I get it out? Most likely, this would go into a flip-chip package to accommodate the high integrated nature of this. Well, the flip-chip redistribution layer, the package substrate, and the surrounding pins will all have to be very carefully designed so that the RF signal will be sufficiently isolated. On RF-only chips, this isn't a problem. Heck, they have fully-integrated Bluetooth chips. But Bluetooth only has enough power to reach 30 meters. We're talking a signal that has to reach several kilometers here. That's a difference. It's doable, but it is just another big constraint on the design.
Can they do it? I think they *might* be able to, but not without significant design effort. Personally, I think they're better off going with a multi-die package and leaving the RF block as a die right beside the other, and specially route through the substrate with its own power. Integrated doesn't always have to mean "everything on one chip". Just like gift wrapping multiple presents in the same wrapper, I think this would be a better way to go for this effort, and will deliver fruit MUCH faster than what I believe they're implying in the article.
Most Bluetooth vendors have already developped and are in production with 'single' chip designs that incorporate both the digital baseband with the analog radio and all the 'glue logic' in between. This isn't really news on the Analog-Digital single chip designs, but more for the Analog-digital cellular single chip designs.
Cellular chipsets require very precise parts and separate the analog from the digital for good reasons - noise, crosstalk, coupling, etc. This is a good step forward for wireless design as a whole.
This will NOT be a competitor to OMAP. OMAP is a chip that contains an ARM925T RISC, C55x DSP, and just about every peripheral you can think of (USB, MMC, Memory Stick, UART, Bluetooth, etc).
TI is planning on producing a chip that combines into a single chip the software, baseband technology, applications processing, power management, radio frequency and embedded memory that typically require separate processors.
There is also a NYT Article.
What's significant about SiGe and heterojunctions is that current Si technology is homojunction with a fixed, indirect bandgap (the latter being why there are no Si electro-optic devices like LEDs. Heterojunctions allow you to tune the bandgap and even create direct gap devices (which LED/Laser consistuents GaAs, GaInP, GaP, AlGaAs, et al., are) out of indirect gap elements. This throws in an additional set of parameters into the circuit design mix that allows traditional limits on carrier mobility, intrinsic carrier concentrations and other basic device parameters to be thrown out the window. This completely changes both the upper bounds of performance and potentially even basic device operating modes. Many of the "tricks" from the GaAs world become available to "mere mortals of the commercial Si world" such as HBTs, HEMTs, LEDs, EOs, et al.
Now one of the largest Si manufacturers has seen the economics as workable for general purpose uses. That is profound because for >30 years, GaAs has never gotten there beyond its very small niches, largely due to economics.
As mentioned, mixed signal devices have been around for some time (every cellphone has a mixed signal IC). Combining digital computing with analog circuitry has often required trading performance on one or the other - often what makes good digital gates MOS devices and processing isn't optimal for analog circuits which is best done in bipolar. HBTs are a special high-performance bipolar technology - an analog designer's dream, yet all the VLSI digital can be on-chip without compromise!
The TI OMAP comparison is completely out in left field as others have mentioned. Irrelevant.
JSki