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UIUC Creates World's Fastest Transistor Again
An anonymous reader writes "The University of Illinois has developed (again) the world's fastest transistor operating at over 500 GHz. They used an indium phosphide based wafer, and super-scaled dimensions. The device kind of looks like a spaceship." Milton Feng, the professor in charge of the team behind the transistor, admits that their ultimate goal is a terahertz transistor, which given their previous achievements, doesn't sound too lofty.
Sweet, now the 250 Ghz's will be totally affordable.
From the article:
150 nm, 382 GHz
100 nm, 452 GHz
75 nm, 509 GHz
At their current rate of improvement, a 680GHz device will have a collector size of 0 nm. Just imagine what will happen once they manage negative sizes!
"They redundantly repeated themselves over and over again incessantly without end ad infinitum" -- ibid.
The University of Illinois has developed again the world's fastest transistor operating at over 500 GHz
If only they had documented the damn thing, they wouldn't have to develop it twice!
."The steady rise in the speed of bipolar transistors has relied largely on the vertical scaling of the epitaxial layer structure to reduce the carrier transit time," said Milton Feng, the Holonyak Professor of Electrical and Computer Engineering at Illinois, whose team has been working on high-speed compound semiconductor transistors since 1995. "However, this comes at the cost of increasing the base-collector capacitance. To compensate for this unwanted effect, we have employed lateral scaling of both the emitter and the collector."
I mean, that's just blindingly obvious.
Ah, grasshopper: when you understand that the answer is "both" and "neither," then you will be on the path to entanglement.
taken! (by Davidleeroth) Thanks Bingo Foo!