IBM's Transistor Data Revealed
Atryn writes "After last week's story — Intel and IBM both announcing breakthroughs in chip design enabling continued adherence to Moore's Law — many folks wondered how and why the two companies' announcements came out simultaneously. The Register explains it, and as a bonus they are releasing a leaked copy of IBM's future research documentation (PDF)."
Do you work for Intel or IBM?
Intel developed a time travel device and sent a robot back in time to steal the plans from IBM.
And they tried to kill Bill Gate's mother, but you'd be suprised how difficult that was.
You'd think 640 rounds of ammo would be enough to kill anybody.
From Intel: High-K Material is a material that can replace silicon dioxide as a gate dielectric. It has good insulating properties and also creates high capacitance (hence the term "high-k") between the gate and the channel. Both of these are desirable properties for high performance transistors. "k" (actually the Greek letter kappa) is an engineering term for the ability of a material to hold electric charge. Think of a sponge. It can hold a lot of water. Wood can hold some but not as much. Glass can't hold any at all. Similarly, some materials can store charge better than others, hence have a higher "k" value. Also, because high-k materials can be thicker than silicon dioxide, while retaining the same desirable properties, they greatly reduce leakage.
See Swann vs. Edison. Swann demonstrated first. Edison had a personal PR department.
It's all about the marketing. However, in that case the battle was asymetrical, not just in marketing, but in time to market. Having shit on the shelves with your name on it is marketing that's pretty hard to trump.
KFG
... enabling continued adherence to Moore's Law
I don't understand why you would want to adhere to Moore's law. If I were able to make chips 10 times denser, why would I not market that right away rather than waiting for 3-5 years needed to follow the law.
When our name is on the back of your car, we're behind you all the way!
It seems more likely to me that they're both announcing this "new technology" around now for a different reason.
The first US patent to mention the use of a hafnium oxide as a dielectric expires later this year.