Carbon Nanotube-Based NVRAM In 2-3 Years?
According to NanoWerk, UC Riverside researchers have come up with a memory device based on telescoping multi-walled carbon nanotubes. According to one of the researchers, 'This finding leads to a promising potential to build ultrafast high-density nonvolatile memory, up to 100 gigahertz or into the terahertz range" and a prototype could be demonstrated "in the next two to three years.' Similar devices from UCLA and Caltech based on bistable rotaxanes are farther along in being integrated into actual memory circuits, but tend to break after a fairly small number of position changes. Carbon nanotubes may promise more durable switches.
A brief scan of the paper seemed to indicate that their results were based on simulations. Do they have some working model that justifies it coming out in 2 or 3 years?
Or did I read the paper to fast (hey, at least I *did* RTFA)?
It looks to me like they've essentially created what could be compared to a nano-abacus. I wonder how immune this system would be to physical movement (i.e. jarring). In a similar vein, I would imagine that it would be just as static sensitive as most other memory devices even though.
Did I miss something, though? How is the position of the telescoping tube read? Applying a current to it would change the position, would it not?
It'd be really neat if this turns out to be genuine, but I'm not holding my breath. Been disappointed too many times already.
File under 'M' for 'Manic ranting'
Sounds vaguely similar to the nano-scale rod-logic of Neal Stephenson's stories.
"Prefiero morir de pie que vivir siempre arrodillado!"