Researchers Achieve Amazing Memory Density
Mr. Fahrenheit writes in with a Wired story on research out of Arizona State, where researchers have "developed a low-cost, low-power computer memory that could put terabyte-sized thumb drives in consumers' pockets within a few years... The new memory technology — programmable metallization cell (PMC) — comes as current storage technologies are starting to reach their physical limits." PMC involves the on-demand creation of copper nano-wire bridges. It's said to promise memories that are 1/10 the cost and 1/1000 the power consumption of conventional Flash memory. Three memory manufacturers have licensed the technology and the first chips are expected on the market in 18 months.
I went to the website http://www.axontc.com/ . and found following description;
"Key Benefits
PMCm has a number of unique attributes that make it a highly attractive component for future systems on silicon:
Operation at low voltages ( 0.3 V)
High speed write and erase operations
( 30 ns)
Low energy to change state ( 1 pJ)
Physical scalability to tens of nm
Easy integration with IC logic circuitry
Operation as a low refresh-rate DRAM or as a true non-volatile memory with high endurance (based on the programming mode).
These features define a class of devices that are essential for projected electronics systems and which will be difficult to realize using developed versions of today's circuits. "
Hope that answers some of your questions