Samsung Develops Power-Sipping DDR4 Memory

Alex writes with this excerpt from TechSpot: "Samsung Electronics has announced that it completed development of the industry's first DDR4 DRAM module last month, using 30nm class process technology, and provided 1.2V 2GB DDR4 unbuffered dual in-line memory modules (UDIMM) to a controller maker for testing. The new DDR4 DRAM module can achieve data transfer rates of 2.133Gbps at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class process technology, with speeds of up to 1.6Gbps. In a notebook, the DDR4 module reduces power consumption by 40 percent compared to a 1.5V DDR3 module. The module makes use of Pseudo Open Drain (POD) technology, which allows DDR4 DRAM to consume just half the electric current of DDR3 when reading and writing data."

Comments

Pseudo Open Drain (POD) technology

[PatPending]

PatPending (talking to friend on phone during a bash help session): It's called Pseudo Open Drain (POD) technology
Friend: Okay, I'll try that...
Friend(typing): sudo open drain
Friend: Argh! I hate this command line bullshit!

Re:How much power comparatively?

[PatPending]

Didn't you read the title of the summary? It doesn't "chew," it "sips."