MIT Reports 400 GHz Graphene Transistor Possible With 'Negative Resistance'
An anonymous reader writes "The idea is to take a standard graphene field-effect transistor and find the circumstances in which it demonstrates negative resistance (or negative differential resistance, as they call it). They then use the dip in voltage, like a kind of switch, to perform logic. They show how several graphene field-effect transistors can be combined and manipulated in a way that produces conventional logic gates. Graphene-based circuit can match patterns and it has several important advantages over silicon-based versions. Liu and co can build elementary XOR gates out of only three graphene field-effect transistors compared to the eight or more required using silicon. That translates into a significantly smaller area on a chip. What's more, graphene transistors can operate at speeds of over 400 GHz."
"in which it demonstrates negative resistance (or negative differential resistance, as they call it)"
Negative resistance and negative differential resistance are not the same thing. Negative resistance would mean the current flows against the voltage. Negative differential resistance just means that the current goes down when you increase voltage.
The first one is not possible (unless you've got an external energy source driving the current) because it would imply a perpetuum mobile. The second is unusual, but doesn't violate any fundamental laws of the universe.
Dont change your name, it serves you well.
Tomorrow is another day...
NAND? Don't leave us hanging.
(-1: Post disagrees with my already-settled worldview) is not a valid mod option.