Samsung's Fastest Phone Memory Ever Goes Into Production at 512GB (cnet.com)

Samsung today said it's started mass producing 512GB mobile-focused flash memory with over twice the read speed and 1.5 times the write speed of the previous leader, the 1TB module announced last month at CES. From a report: The V-NAND (PDF) memory is based on its embedded Universal Flash Storage (eUFS) 3.0 spec -- the 1TB is eUFS 2.1. Samsung says the 512GB memory can hit read speeds up to 2,100 megabytes per second compared with 1,000MB/sec of the 1TB flash; sequential write can hit 410MB/sec versus 260MB/sec. The eUFS 3.0 1TB memory is slated to arrive in the second half of 2019.

Comments

Re:Not memory it's storage

[jellomizer]

Because it is still Memory, and it is still RAM (Random Access Memory). The difference is that this product is Non-Volatile RAM that data will not go away after its power is turned off and what you call Memory is Volatile RAM, which will go away after power is lost.
However both is Memory and RAM. As it hold data given to it for later retrieval. And they are Random Access meaning you don't need to sift threw a blocks of data you don't need until you happen to get to your useful memory spot.

Historically Storage wasn't Random Access, It was read sequentially from Cards, to Tape. The Disk magnetic storage still had to reference data in the time, however it can take shortcuts, by moving to different sectors of the disk and reads a block of data.