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Intel, IBM Announce Chip Breakthrough

Intel announced a major breakthrough in microprocessor design Friday that will allow it to keep on the curve of Moore's Law a while longer. IBM, working with AMD, rushed out a press release announcing essentially equivalent advances. Both companies said they will be using alloys of hafnium as insulating layers, replacing the silicon dioxide that has been used for more than 40 years. The New York Times story (and coverage from the AP and others) features he-said, she-said commentary from dueling analysts. If there is a consensus, it's that Intel is 6 or more months ahead for the next generation. IBM vigorously disputes this, saying that they and AMD are simply working in a different part of the processor market — concentrating on the high-end server space, as opposed to the portable, low-power end.

30 of 112 comments (clear)

  1. Two breakthroughs in one day? by zero-one · · Score: 4, Insightful

    With this breakthrough and that other one perhaps Moore's Law needs updating.

    1. Re:Two breakthroughs in one day? by kharchenko · · Score: 4, Funny

      Yes, Moores' law didn't account for dupe postings. If we could just post this news a few more times today we could jump decades ahead in terms of transistor density! Keep up the pace dear editors :)

  2. Not news by LighterShadeOfBlack · · Score: 3, Insightful

    Sorry but why is this being reported again now? We already knew Intel and IBM had achieved a 45nm process and that it would be coming to mass-market chips in 2007-08. It's 2007 and it's here. Hooray and all that, but is a company following through on its claims really so shocking that it constitutes being reported again... twice?

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    1. Re:Not news by unc0nn3ct3d · · Score: 2, Insightful

      pretty sure this article was more about the switch to Hafnium as an insulator as apposed to the 45nm technology. Also the fact that they are using a new silicon substrate over the existing standard...

    2. Re:Not news by Bender_ · · Score: 2, Insightful


      That is not true. There will be a number of companies doing 45nm without high-k and metal gates.

    3. Re:Not news by Bender_ · · Score: 2, Informative


      The alternative would have been just to shrink the devices, gain less on performance and use circuit techniques to battle parasitic power consumption. That is what most companies in cost sensitive markets are going to do.

  3. Chip Breakthrough.... by Prysorra · · Score: 3, Funny

    But can they keep up with Lays? :D

  4. RFI? Electromigration? by caitriona81 · · Score: 2, Insightful

    But how much further will that get them before RFI makes it a moot point? At that small of a pathway, I'd think that random radio signals and electrical noise would be disastrous.
    Also, how well does this survive long term? Is it resistant to electromigration over time?
    All great to hear, but I'm not sure how long this will let them keep pace with Moore's law, at best it buys a couple more years of progress on current processor designs I guess.

    1. Re:RFI? Electromigration? by Kohath · · Score: 3, Interesting

      There are many, many people spending their careers solving those types of problems.

      It's not really interesting when someone does something in 45nm. It's interesting when enough of the problems with 45nm are solved for it to actually be practical to make 45nm-based chips.

      So, the answer to your question is: someone figured it out already.

      Electromigration is only an issue at high current densities. For clarification, "high" is defined as the density where electromigration becomes an issue. The solution is use less current, use more metal so the current is less dense, or find a material that can handle higher current density.

    2. Re:RFI? Electromigration? by cheezedawg · · Score: 4, Funny

      Golly- I hope that all of the PhDs working on Intel's 45nm process are reading /. today. I bet they never thought about that.

      --
      "The defense of freedom requires the advance of freedom" - George W Bush
    3. Re:RFI? Electromigration? by pnewhook · · Score: 3, Informative

      No the shuttle and station run on older stuff because those processors are radiation immune, and they are critical systems that cannot crash. The laptops are for everyday work that do not interface to the shuttles systems. If they crash from the radiation, the astronauts simply put it aside and grab another one.

      --
      Tesla was a genius. Edison however was a overrated hack who liked to torture puppies.
    4. Re:RFI? Electromigration? by stevesliva · · Score: 3, Insightful

      The shuttle internal systems run on obselete crap.
      Obselete, incredibly reliable, utterly adequate rock-solid gold. If it ain't broke, don't fix it. Launching enormous rockets with software control is possible to screw up. Given the choice, I'd rather fly with the proven computers.
      --
      Who do you get to be an expert to tell you something's not obvious? The least insightful person you can find? -J Roberts
    5. Re:RFI? Electromigration? by mrhartwig · · Score: 2, Insightful

      The shuttle used hand woven magnetic core memory until 1990.

      Yep. Stable, information-retaining (unfortunately, it even retains info after immersion in seawater), and basically immune to cosmic ray disruptions. Which doesn't require a lot of error-correction circuitry.... Not terribly data-dense or fast compared to semiconductor (part of the reason to replace it, after all) but it works.

      It was designed in the 60s...

      Actually, the computers themselves were designed the 70s, with updates in the 80s; core memory (I don't think you meant that) was actually from the 40s & 50s, with significant updates afterwards. You know, of course, that it took years of system integration testing after the new HW was finished before the new semi-conductor memory (along with the upgraded CPUs, etc.) were flown? Some silly idea NASA has about trying to make sure stuff that keeps people alive isn't broken in any way. ...the only reason it wasn't decomissioned 3 decades ago....

      Right. If it flew in 90 (might have actually been 1991 iirc, but maybe not) it's still only been flying for 17 years. How do you decommission something 13 years before it first flew?

      Just because something's old doesn't mean it's not useful. There are also cost/benefit factors in replacement; in this case (probably; I don't pretend to know all of the reasons) external requirements that have nothing to do with HW (like testing regulations) greatly increase the cost of replacement. Plus, you have the whole anytime-you-change-you-increase-risk problem; there's a reason that "if it ain't broke, don't fix it" is an adage.

  5. Is this kdawson's first front page dupe by antifoidulus · · Score: 3, Funny

    Welcome to the club! On your application as editor, did you have to swear that you don't actually read slashdot as a precondition for employment like all the other editors?

    1. Re:Is this kdawson's first front page dupe by QuickFox · · Score: 2, Funny

      they misspelled it as halfnium That's no misspelling, it is halfnium! You could have understood this yourself, if you hadn't been so quick to dole out criticism, and instead had spent a second considering the fact that they reduced the size from 90 nm to 45 nm.
      --
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  6. printer/ad free version by farker+haiku · · Score: 2, Informative
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  7. Axiom? by rumith · · Score: 4, Insightful

    The Intel announcement is new evidence that the chip maker is maintaining the pace of Moore's Law, the technology axiom

    I thought it's an empiric law; the definition of axiom is quite different from that.

    Intel said it had already manufactured prototype microprocessor chips in the new 45-nanometer process that run on three major operating systems: Windows, Mac OS X and Linux.

    Again, I thought it's the operating systems who run on microprocessors, not vice-versa. And I [not being a kernel developer, though] can't see any reason for an OS to stop functioning on a new processor model if the architecture is intact and no serious hardware-level bugs are introduced.

  8. This is a big deal by noopm · · Score: 5, Interesting

    As a graduate student researching this field, this is an amazing bit of news! - The intel high-k announcement is a *major* breakthrough, and a new, disruptive technology for chip technology especially as far as the the introduction of new materials in the Fab are concerned (and trust me, Fab engineers are paranoid about such kinds of shifts). It essentially involves replacing the SiO2 dielectric gate insulator with a new class of materials, very likely Nitrided Hafnium Silicates (though they have not publicly acknowledged the silicate part, they just mention it as a compound of Hafnium - it is the leading contender in the field).

    The high-k film can be made physically thicker than the very thin SiO2 layer (which is only around 12 Angstroms thin at the moment, making it leak like a sieve) without messing up the capacitance requirements for the transistor. The introduction of new metal gate instead of the classic poly-crystalline silicon (called poly) is also abig deal, and there is greater secrecy on what those materials are. The wikipedia article on high-k has the details. http://en.wikipedia.org/wiki/High-k_Dielectric

    1. Re:This is a big deal by noopm · · Score: 2, Informative

      > What do you think about
      > http://hardware.slashdot.org/comments.pl?sid=21912 8&cid=17787848

      HfO2/Hf Silicates is mature technology (Obviously, else they wouldn't be in production this year) - however, I disagree with it having been mature for more than 10 years. There were all sorts of compatibility problems with respect to the new layer of "foreign materials" killing the mobility of the electrons responsible for the transistor action in the absence of the kind of relatively perfect interface that Si/SiO2 had. Finding new metals for the right band alignment (different for both the PMOS vs NMOS) was an added absolutely non-trivial challenge. The amount of research activity that this problem has generated is insane. For example, a prominent research review article that was published back in 2001 "High-kappa gate dielectrics: Current status and materials properties considerations" by Wilk et. al, (J. App. Phys. 89, 5243-5275 2001) has been cited 1429 times since then when I checked today and it's still growing...

      Ten years ago, scaling down of SiO2 had not really hit the wall, it was coming; so they began this work back then; It's only the last couple of years that frequency scaling has not been going upwards... The real fear was if high-k technology would miss the "45 nm technology node" - in which case it might have had to wait till the 38 nm or whatever node that came next. It was thus a question of timing, and frankly it is impressive that Intel/IBM has managed to converge upon a set of solutions which have overcome all the new problems** that the new manufacturing technology (they use ALD, atomic layer deposition) and new materials and their interfaces bring about. Hopefully these chips won't start exhibiting flaky behavior when the overclockers get their hands on these chips....

      ** Some of the tough problems they had to solve include (sorry for the karma whoring, check the wikipedia high-k article for the links http://en.wikipedia.org/wiki/High-k_Dielectric)
      * Permittivity
      * Band gap
      * Band alignment to silicon - sufficiently large band offsets are needed to keep the leakage current low and protect the film from hot carrier injection.
      * Thermodynamic stability
      * Minimization of electric fields due to phonons in the dielectric to reduce scattering in the Si substrate so as to achieve high mobility of charge carriers in the MOSFET channel
      * Minimization of the concentration of electrically charged and/or electrically active defects in the film
      * Film morphology - Amorphous or epitaxial films seem to be the promising candidates - polycrystalline materials are generally ruled out.
      * Interface quality
      * Compatibility with the current or expected materials to be used in processing for CMOS devices
      * Process compatibility - for one, the film must survive sufficiently high temperatures such as a Rapid thermal anneal to 1000 C for say, 10 s (as dictated by the CMOS technological process)
      * Reliability
      * Stability against degradation by the electric field and injected carriers.
      * Precursor availability
      * Precursor and process costs

  9. Rename? by somegeekynick · · Score: 5, Funny

    What, now Silicon Valley becomes Hafnium Valley?

    1. Re:Rename? by autophile · · Score: 2, Funny

      What, now Silicon Valley becomes Hafnium Valley?

      Let's hope that real estate prices get cut in haf :(

      --Rob

      --
      Towards the Singularity.
    2. Re:Rename? by Mspangler · · Score: 2, Informative

      From webelements:

      "Most zirconium minerals contain 1 to 3% hafnium. Hafnium is a ductile metal with a brilliant silver lustre. Its properties are influenced considerably by the impurities of zirconium present. Of all the elements, zirconium and hafnium are two of the most difficult to separate. Hafnium is a Group 4 transition element.

      Because hafnium has a good absorption cross section for thermal neutrons (almost 600 times that of zirconium), has excellent mechanical properties, and is extremely corrosion resistant, it is used for nuclear reactor control rods.

      Hafnium carbide is the most refractory binary composition known, and the nitride is the most refractory metal nitride (m.p. 3310C)."

      Intel is not going to be burned by thermal problems again, and you can also hide behind your CPU if "the big one" goes off in the neighborhood. OK, several CPUs and a water tank. But still.

      Most efficient.

      Last price I could find is $150/pound.

  10. Re:Please tag article... by dreddnott · · Score: 2, Informative

    This article's summary is far more accurate and informative than the other one. I posted several times in the older post to help clear up some misinformation (the article it linked to misspelled hafnium as "halfnium" and only mentioned it once, and never mentioned IBM or AMD).

    --
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  11. Whaa? by Godji · · Score: 3, Insightful

    If there is a consensus, it's that Intel is 6 or more months ahead for the next generation. IBM vigorously disputes this, saying that they and AMD are simply working in a different part of the processor market

    Didn't read TFA, but is it possible to have a consensus with one party vigorously disputing it?

    1. Re:Whaa? by UltraAyla · · Score: 2, Insightful

      It would seem to be consensus of the analysts, but who knows how accurate that is if one company is disputing the information leading to the consensus.

  12. Re:How long for this to reach laptops? by DrSkwid · · Score: 3, Insightful

    never buy anything

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    There are places where the networks are not touching,and there are places where they are-Boeing's Lori Gunter
  13. Moore's Law is Dead! Or not! by mschuyler · · Score: 3, Funny

    The funny thing about this is that every few weeks you read some article that says, "Yup! That's it! We simply cannot get any more out of Moore's Law! It's dead."

    Then a couple weeks later someone says, "Yup! We're gonna squeeze a few more years out of Moore's law. New advance! It isn't dead!"

    Moore's Law is like the Energizer Bunny. It just keep's going.

    --
    How about a moderation of -1 pedantic.
    1. Re:Moore's Law is Dead! Or not! by noidentity · · Score: 3, Funny

      "Moore's Law is like the Energizer Bunny. It just keep's going."

      Moore's Law is like the inappropriate apostrophe. It just won't die.

  14. Re:Diamonds are next.... by ChrisMaple · · Score: 2, Interesting
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  15. Finally... by IorDMUX · · Score: 2, Interesting

    Well, it's about time. Hafnium oxide dielectrics were the talk of the semiconductor research world in the early/mid 90's. Big-time chip manufacturers refused to adopt the technology, though, hoping that some technology that didn't require the re-vamping of an entire fabrication facility would come along and magically reduce gate oxide lekage current.

    The technology is fairly mature by now (from a research standpoint), so the only "news" is that the major manufacturers have finally realized that it is the least of all evils from a commercial point of view.

    Personally, I wonder how different the current market would be if one of the commercial fab plants would have embraced the technology 5-10 years ago.

    --
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