Intel and Micron Unveil 3D XPoint Memory, 1000x Speed and Endurance Over Flash

MojoKid writes: Today at a press conference in San Francisco, Intel and Micron unveiled 3D XPoint (Cross Point) memory technology, a non-volatile memory architecture they claim could change the landscape of consumer electronics and computer architectures for years to come. Intel and Micron say 3D XPoint memory is 1000 times faster than NAND, boasts 1000x the endurance of NAND, and offers 8-10 times the density of conventional memory. 3D XPoint isn't electron based, it's material based. The companies aren't diving into specifics yet surrounding the materials used in 3D XPoint, but the physics are fundamentally different than what we're used to. It's 3D stackable and its cross point connect structure allows for dense packing and individual access at the cell level from the top or bottom of a memory array. Better still, Intel alluded to 3D XPoint not being as cost-prohibitive as you might expect. Intel's Rob Crooke explained, "You could put the cost somewhere between NAND and DRAM." Products with the new memory are expected to arrive in 2016 and the joint venture is in production with wafers now.

Comments

Isn't electron based, it's material based?

[Burdell]

And what material are they using? Positronic unobtanium?

Newegg

[Snufu]

As with any new 'pewter tech, I'll believe it when when it I see it on Newegg with >500 reviews, > 3.5 stars, and affordable for the average Jane/Joe.

Re:Newegg

[tomxor]

Usually i'd agree... there's been countless up and coming new types of memory that never make it.

But i'm cautiously optomistic here because

a) It's Intel and not some tiny obscure VC

b) they said they already have wafers and mention 2016 O_o !

no wonder they ditched their awesome SSD controllers.

Re:Ohh Ohh

[ArcadeMan]

And I already know how we're going to erase that memory.

Seems Not

[DumbSwede]

from the The Register

An Intel spokesperson categorically denied that it was a phase-change memory process or a memristor technology. Spin-transfer torque was also dismissed. Whatever it is, Intel and Micron have been developing it for about ten years.

Re:Seems Not

[Anonymous Coward]

They can deny all they want - intel has been filing patents on a new type of GST PCM left and right over the last 6 years.

Re:Seems Not

[mr_mischief]

Nanoscale slider switches? ;-)

Seriously, though, it's some sort of material change according to what little information has been released.:

These columns contain a memory cell and a selector, but the real innovation is that unlike other technologies, which store data by trapping electrons in insulators (and other electron trapping techniques), 3D XPoint stores data by using the property change of the material itself. This bulk material property change utilizes the entire portion of the memory cell, which increases scalability and performance.

-- Tom's Hardware

What's really interesting is the PDF with one diagram showing Xpoint sooner and then 3D XPoint on the 2018-2019 timeline at Semicon Taiwan that later has a diagram much similar to Intel/Micron's diagram. It appears to be showing a variable resistor (potentiometer) then a diode between the word line and bit line crossbars.

If they are building a materials-based variable resistor that gets written to be more or less resistive based on voltage what are they calling that process? It needn't be chalcogenide, but it sure sounds like some other sort of phase change to change the resistance. If it is memory that adjusts its resistance based on past voltages and uses that resistance for reading the value, that sounds like a memristor. (According to Chua all PCM, ReRAM, and MRAM are memristors.)

I think perhaps Intel and Micron are saying it's not PCM and it's not memristors just so people don't confuse it with other attempts at similar but different approaches.

Ram replacement?

[duckintheface]

There has been some discussion http://bit.ly/1SLtYAh that 3D XPoint might be a replacement for RAM in mobile devices because it is "ram-like" in speed and low power due to the fact that it's non-volatile. If this can replace RAM and NAND in phones and tablets, it will be a major milestone in the history of computing.

Re:Ram replacement?

[Anonymous Coward]

1 Performance difference based on comparison between 3D XPoint technology and other industry NAND
2 Density difference based on comparison between 3D XPoint technology and other industry DRAM
3 Endurance difference based on comparison between 3D XPoint technology and other industry NAND

They don't actually specify *what* NAND.
So assuming typical marketing weasels, that means it's 1000x the worst TLC they could find anywhere - and that's typically rated at 300 P/E cycles.

But since the XPoint cells are individually addressable bit by bit, the comparison is probably to SLC

Yes, they totally wouldn't write "1000x the endurance of industry-leading IMFT SLC NAND" if that were the case...

in which case the relevant number of P/E cycles for XPoint would be 10E8 and you are off by a factor of more than 33,000.

Would you like a bridge with that?

Re:memresistor?

[under_score]

A non volatile PC would be nice.

No it wouldn't. Not unless we go back to having hard reset buttons on the front of our machines. The distinction between volatile and non-volatile memory is useful since we still have such shitty software full of bugs and security flaws. I wan't to be able to "reset" my machine without having to erase my hard disk.

Re:bottlenecks

[silas_moeckel]

M.2 is the desktop interface for this, it supports 4 PCI 3.0 lanes at 985 MB/s per lane that is nearly 4GB/s. PCI 4.0 is not to far off and doubles that.

Re:cost per bit...

[mlts]

I can see this being used two ways:

A fast SSD.

A swap device/slow RAM.

This can make things interesting for SANs, especially because it adds another tier to the disk type hierarchy.

I'd like to see it used as a cache, as well for swap and the core OS files so booting is made quicker. However, it would be useful for database index volumes as well.

Re:Looks Great, Beware?

[viperidaenz]

Of course it's a government conspiracy.
Who do you think they orchestrated the phase out of tin foil and replaced it with alunimium foil?

Re:bottlenecks

[Forever Wondering]

SATA 3.2 (aka SATA Express) is a connector change, but is actually PCIe. PCIe is already fast enough. IIRC, Apple hooks up some SSDs directly through PCIe.

And, PCIe can actually go "off board" via a cable (since PCIe is based on separate upstream/downstream lanes and differential line drivers). Also, PCIe 4.0 will have a transfer rate of 31.5 GB/s, yet be fully backward/forward compatible.

Intel already has a CPU package that has two substrates wire bonded together, one for CPU and one for memory. When I saw this, I assumed it would be to accomodate HP's memrister memory. But, now, it's [obviously] been planned for this new type of memory.

PalmOS

[DrYak]

However, current operating systems and programming techniques aren't up to this yet. It will take a long time.

PalmOS has been 100% RAM-only from the original Palm Pilot all the way up to Palm Thungsten III (Palm T5 with Flash, and Palm Live with a micro drive where the first to actually have a permanent main storage).
Everything is in-RAM, everything is stored in in-RAM databases. Data saving is immediate, etc.

(Also, although not so extreme:
lots of embed system, usually Linux-based, only have a minimal amount of ROM as sole storage and mainly work using RAM. Though they aren't completely in-RAM oriented and still use the concept of "files" and "storage", and thus make use of ramdisk (usually tmpfs) to hold files.
Still, that also machine which mainly count on RAM storage).

Thank me

[marciot]

You can thank me for this being announced now, because I *just* bought a SSD last week. You're very welcome.

MRAM?

[Taco Cowboy]

This '3D Xpoint memory' sounds very much like MRAM as described by the following article

http://spectrum.ieee.org/semic...

Last year (2014) Samsung reportedly was collaborating with 15 partners in developing similar spintronic MRAM memory technology

http://www.mram-info.com/samsu...

Hynix and Toshiba also partnered to develop their own version of MRAM

http://phys.org/news/2014-04-f...

In less than 5 years we might get to enjoy the fruits of the labor of the thousands of researchers who have been working very hard to make the spintronic dream come true, and I for one, wish to take this chance to thank them for their hard works!