SnO: First Stable P-Type 2D Semiconductor Discovered (phys.org)
New submitter Namarrgon writes: Transistors made with Ashutosh Tiwari's new semiconducting material could lead to computers and smartphones that are more than 100 times faster than regular devices. While researchers in this field have recently discovered new types of 2D material such as graphene, molybdenun disulfide and borophene, they have been materials that only allow the movement of N-type, or negative, electrons. In order to create an electronic device, however, you need semiconductor material that allows the movement of both negative electrons and positive charges known as "holes." The tin monoxide material discovered by Tiwari and his team at the University of Utah is the first stable P-type 2D semiconductor material ever in existence.
Vacuum tubes work marvelously well with only electrons.
Tin + Oxygen sounds a lot cheaper (and more readily available) than those iridium, molybdenum, etc compounds, too
-SaNo
Is that the same Ashutosh Tiwari I did shots with at the Indian Institute of Technology?
they have been materials that only allow the movement of N-type, or negative, electrons. In order to create an electronic device, however, you need semiconductor material that allows the movement of both negative electrons and positive charges known as "holes."
Captain pedantic here. Electron holes are not positive charges. They are the absence of an electron in a lattice where one could exist. This "hole" can be treated for convenience and practicality like a positively charged particle but that isn't technically the same thing.
Let it SnO, let it SnO...
If by "marvelously well" you mean with high random noise levels, comparatively low current capacities, and comparatively huge volume requirements, sure.
And if by "only electrons" you mean "only electrons, neutrons, protons, electromagnetic fields and - of course - vacuum, sure.
I've fallen off your lawn, and I can't get up.
Electron transit speed is not the limiting factor in device speed. Don't know who wrote the article but there is no way your Iphone is getting a 200 GHZ cpu from this.
no an electron from any direction can fill the hole, only the holes move along current vector.
What's wrong with calling it 2D? Electron motion is effectively limited to two dimensions, and it doesn't make much sense to talk about lateral movement through the degenerate dimension. And if you hate this you'll be even more angry that scientists often refer to quantum dots as zero dimensional.
SJW n. One who posts facts.
No, they will not make anything "100 times faster". The limiter today is interconnect and that does not get any faster at all with this material.
Most ACs are not even worth the keystrokes to insult them. Be generically insulted by this and ignored otherwise.
It's one of the limits; that speed goes along with a concept called 'mobility' which directly translates to better current-carrying capacity.
Higher mobility for p-type devices DEFINITELY would speed CMOS.
Since SnO is a p-type material, it could become half the circuitry of a CMOS IC, and because it is to be a layer atop (presumably silicon) other materials, it would make for lower silicon area for a given complexity. By using that third dimension, your interconnect wiring gets shorter and faster.
It's one of the limits;
Your reply isn't even even logically sufficient.
Here let me give you a car analogy.
You have a junker Saturn and put in a Ferrari's engine, then take it out onto I-95 during rush hour. The engine was never the limiting factor, the tires transmission, steering, and the highway were all the much greater limiting factors.
The band structure for a bulk material (full 3-d crystal structure) defines the behavior of electrons deep inside the material, not near a surface - and near-suface conditions are different. The permitted electron orbitals (and bonding, and atomic spacing...) in a very thin layer of SnO might be very different indeed (and have different bandgap, mobility, etc.) from the bulk material.
The fabrication and characterization of a material that is NOT similar to its parent 3-d lattice is what has been described here, and it is important to note the 2-d nature of this semiconductor, so that readers aren't confused by the chemical similarity to a bulk semiconductor with dissimilar behavior.
Other surface-dependent characteristics define the behavior of polysilicon (Ovonics), quantum dots, and some very useful low-noise HEMTs. Search on "2-d electron gas" ...