I'm about 6 months away from my PhD in semiconductor physics.
They mean metal oxides. Leading candidates are Halfnia and Zirconia. These are "High-K dielectrics".
Using both reduces the Effective Oxide Thickness (EOT) of the gate dielectric. For the same thickness material, high-k dielectrics look like a thinner amount of silicon dioxide. Metal gates eliminate depletion effects in the gate (poly-depletion), which also makes the oxide look thinner.
With lower EOT, the gate has better control of the channel, so leakage goes down.
>For its part, Intel INTC.O plans to detail its development and manufacture of triple-gate transistors in a paper it is delivering at a technical conference next week in Japan, Intel President and Chief Operating Officer Paul Otellini told an Intel conference on Monday.
I do research on double-gate transistors. I have no clue what they mean by a triple-gate transistor. I think that this is another lame intel PR attempt. It's probably like when they made up a new name for FDSOI and called it depleted-substrate or some BS like that and got laughed at. They must want to be one gate better.
Actually the performance benefit from double-gate is minimal. The approximate delay associated with switching a capacitor is CV/I, where C is the capacitance of the gate, V is the source voltage, and I is the on current of the device. Double-gate gives you double (or slightly more) the current, at the expense of twice the capacitance. You don't really gain much at the same gate length. The real advantage is scaling. You can make shorter double-gate FETs, and gain the kind of performance you're used to from following Moore's "Law".
The inversion layer forms on the sides of the fin and the conduction occurs along the fin. Actually, at these dimensions it is debatable that you may have volume inversion of the fin. The source/drain contacts occur at the ends of the fins. A top-down drawing/SEM would have helped.
This is difficult to do - your basically talking something along the lines of silicon deposited by some for of epitaxial growth - and for thick layers that's a timeconsuming process. And thus expensive.
True, but all high-performance device wafers start out with a layer of epi anyway to have a higher quality film than CZ (less oxygen intersticials for example).
One thing that was not mentioned was the cost of this trick - how does it compare with germanium or gallium arsnide? (Ok, projected to compare?).
GaAs and Ge are very expensive, and it's hard to produce substrates much larger than 4". I'm sure IBM's strained SiGe can be grown on 12" wafers.
Not only that, but the interdiffusion coefficents of a strained material are, in general, faster than for the an unstrained material, so this will decrease the lifetime of the devices.
Also true, which is a concern at front-end processing temperatures, but this is typically not a failure method at room temperature.
This is not to say that there aren't a lot of manufacturing and reliability issues associated with SiGe devices.
Try E-Beam, or ZPAL, or conformable contact lithography, or X-Ray, etc. Dimensions below 70nm are achieved regularly TODAY. The manufacurability (throughput, cost, etc) is an issue, but the processes are very possible.
...And Justice for All ???
on
Pay Lars
·
· Score: 1
Halls of justice painted green Money talking Power wolves beset your door Hear them stalking Soon you'll please their appetite They devour Hammer of justice crushes you Overpower
The ultimate in vanity Exploiting their supremacy I can't believe the things you say I can't believe I can't believe the price you pay Nothing can save you
Justice is lost Justice is raped Justice is gone Pulling your strings Justice is done Seeking no truth Winning is all Find it so grim So true So real
Apathy their stepping stone So unfeeling Hidden deep animosity So deceiving Through your eyes their light burns Hoping to find Inquisition sinking you With prying minds
The ultimate in vanity Exploiting their supremacy I can't believe the things you say I can't believe I can't believe the price you pay Nothing can save you
Justice is lost Justice is raped Justice is gone Pulling your strings Justice is done Seeking no truth Winning is all Find it so grim So true So real
Lady Justice has been raped Truth assassin Rolls of red tape seal your lips Now you're done in Their money tips her scales again Make your deal Just what is truth? I cannot tell Cannot feel
The ultimate in vanity Exploiting their supremacy I can't believe the things you say I can't believe I can't believe the price you pay Nothing can save you
Justice is lost Justice is raped Justice is gone Pulling your strings Justice is done Seeking no truth Winning is all Find it so grim So true So real
Seeking no truth Winning is all Find it so grim So true So real
I eventually bought a new NIC after reading newsgroup posts about the 3c509b nics form 3com.
I use a 3c509b and have had zero trouble with it in *nix (slackware, redhat, debian, freebsd, netbsd). I did have trouble with the BeOS demo cd, but never in Linux.
[---Yes, there is a secret message, and this is it: Transmeta's policy has been to remain silent about its plans until it had something to demonstrate to the world. On January 19th, 2000, Transmeta is going to announce and demonstrate what Crusoe processors can do. Simultaneously, all of the details will go up on this Web site for everyone on the Internet to see. Crusoe will be cool hardware and software for mobile applications. Crusoe will be unconventional, which is why we wanted to let you know in advance to come look at the entire Web site in January, so that you can get the full story and have access to all of the real details as soon as they are available.--->
900 MHz phones are spread spectrum. No need to worry about your CPU interfering with it, spread spectrum minimizes the effects of narrow-band interference.
Slashdot Mirror
Doesn't it seem ironic to you to have /usr/local be remote?
I'm about 6 months away from my PhD in semiconductor physics.
They mean metal oxides. Leading candidates are Halfnia and Zirconia. These are "High-K dielectrics".
Using both reduces the Effective Oxide Thickness (EOT) of the gate dielectric. For the same thickness material, high-k dielectrics look like a thinner amount of silicon dioxide. Metal gates eliminate depletion effects in the gate (poly-depletion), which also makes the oxide look thinner.
With lower EOT, the gate has better control of the channel, so leakage goes down.
>For its part, Intel INTC.O plans to detail its development and manufacture of triple-gate transistors in a paper it is delivering at a technical conference next week in Japan, Intel President and Chief Operating Officer Paul Otellini told an Intel conference on Monday.
I do research on double-gate transistors. I have no clue what they mean by a triple-gate transistor. I think that this is another lame intel PR attempt. It's probably like when they made up a new name for FDSOI and called it depleted-substrate or some BS like that and got laughed at. They must want to be one gate better.
Actually the performance benefit from double-gate is minimal. The approximate delay associated with switching a capacitor is CV/I, where C is the capacitance of the gate, V is the source voltage, and I is the on current of the device. Double-gate gives you double (or slightly more) the current, at the expense of twice the capacitance. You don't really gain much at the same gate length. The real advantage is scaling. You can make shorter double-gate FETs, and gain the kind of performance you're used to from following Moore's "Law".
The inversion layer forms on the sides of the fin and the conduction occurs along the fin. Actually, at these dimensions it is debatable that you may have volume inversion of the fin. The source/drain contacts occur at the ends of the fins. A top-down drawing/SEM would have helped.
True, but all high-performance device wafers start out with a layer of epi anyway to have a higher quality film than CZ (less oxygen intersticials for example).
One thing that was not mentioned was the cost of this trick - how does it compare with germanium or gallium arsnide? (Ok, projected to compare?).
GaAs and Ge are very expensive, and it's hard to produce substrates much larger than 4". I'm sure IBM's strained SiGe can be grown on 12" wafers.
Not only that, but the interdiffusion coefficents of a strained material are, in general, faster than for the an unstrained material, so this will decrease the lifetime of the devices.
Also true, which is a concern at front-end processing temperatures, but this is typically not a failure method at room temperature.
This is not to say that there aren't a lot of manufacturing and reliability issues associated with SiGe devices.
I'm not sure of the licensing issues, but the full journal article can be found on the Applied Physics Online web site, at this URL.
Try E-Beam, or ZPAL, or conformable contact lithography, or X-Ray, etc. Dimensions below 70nm are achieved regularly TODAY. The manufacurability (throughput, cost, etc) is an issue, but the processes are very possible.
Halls of justice painted green
Money talking
Power wolves beset your door
Hear them stalking
Soon you'll please their appetite
They devour
Hammer of justice crushes you
Overpower
The ultimate in vanity
Exploiting their supremacy
I can't believe the things you say
I can't believe
I can't believe the price you pay
Nothing can save you
Justice is lost
Justice is raped
Justice is gone
Pulling your strings
Justice is done
Seeking no truth
Winning is all
Find it so grim
So true
So real
Apathy their stepping stone
So unfeeling
Hidden deep animosity
So deceiving
Through your eyes their light burns
Hoping to find
Inquisition sinking you
With prying minds
The ultimate in vanity
Exploiting their supremacy
I can't believe the things you say
I can't believe
I can't believe the price you pay
Nothing can save you
Justice is lost
Justice is raped
Justice is gone
Pulling your strings
Justice is done
Seeking no truth
Winning is all
Find it so grim
So true
So real
Lady Justice has been raped
Truth assassin
Rolls of red tape seal your lips
Now you're done in
Their money tips her scales again
Make your deal
Just what is truth? I cannot tell
Cannot feel
The ultimate in vanity
Exploiting their supremacy
I can't believe the things you say
I can't believe
I can't believe the price you pay
Nothing can save you
Justice is lost
Justice is raped
Justice is gone
Pulling your strings
Justice is done
Seeking no truth
Winning is all
Find it so grim
So true
So real
Seeking no truth
Winning is all
Find it so grim
So true
So real
I eventually bought a new NIC after reading newsgroup posts about the 3c509b nics form 3com.
I use a 3c509b and have had zero trouble with it in *nix (slackware, redhat, debian, freebsd, netbsd). I did have trouble with the BeOS demo cd, but never in Linux.
whoops, missed the scoop by 2 posts
[---Yes, there is a secret message, and this is it:
Transmeta's policy has been to remain silent about its plans
until it had something to demonstrate to the world.
On January 19th, 2000, Transmeta is going to announce and demonstrate
what Crusoe processors can do.
Simultaneously, all of the details will go up on this Web site
for everyone on the Internet to see.
Crusoe will be cool hardware and software for mobile applications.
Crusoe will be unconventional, which is why we wanted
to let you know in advance to come look at the entire Web site
in January, so that you can get the full story and have access to all
of the real details as soon as they are available.--->
900 MHz phones are spread spectrum. No need to worry about your CPU interfering with it, spread spectrum minimizes the effects of narrow-band interference.