SnO: First Stable P-Type 2D Semiconductor Discovered (phys.org)
New submitter Namarrgon writes: Transistors made with Ashutosh Tiwari's new semiconducting material could lead to computers and smartphones that are more than 100 times faster than regular devices. While researchers in this field have recently discovered new types of 2D material such as graphene, molybdenun disulfide and borophene, they have been materials that only allow the movement of N-type, or negative, electrons. In order to create an electronic device, however, you need semiconductor material that allows the movement of both negative electrons and positive charges known as "holes." The tin monoxide material discovered by Tiwari and his team at the University of Utah is the first stable P-type 2D semiconductor material ever in existence.
Vacuum tubes work marvelously well with only electrons.
Tin + Oxygen sounds a lot cheaper (and more readily available) than those iridium, molybdenum, etc compounds, too
-SaNo
Is that the same Ashutosh Tiwari I did shots with at the Indian Institute of Technology?
I gather that currently hole mobility in tin monoxide is about 1 cm^2 / V s. That leaves a long way to catch up to silicon...
Did you know that a semi conductor conducts semis?
they have been materials that only allow the movement of N-type, or negative, electrons. In order to create an electronic device, however, you need semiconductor material that allows the movement of both negative electrons and positive charges known as "holes."
Captain pedantic here. Electron holes are not positive charges. They are the absence of an electron in a lattice where one could exist. This "hole" can be treated for convenience and practicality like a positively charged particle but that isn't technically the same thing.
I was taught that a hole was the absence of an electron. As electrons move one way, the holes, in effect move the other.
Let it SnO, let it SnO...
If by "marvelously well" you mean with high random noise levels, comparatively low current capacities, and comparatively huge volume requirements, sure.
And if by "only electrons" you mean "only electrons, neutrons, protons, electromagnetic fields and - of course - vacuum, sure.
I've fallen off your lawn, and I can't get up.
Electron transit speed is not the limiting factor in device speed. Don't know who wrote the article but there is no way your Iphone is getting a 200 GHZ cpu from this.
So after reading the fine article, it's apparently stuff that's only about one atom thick. /. to take.
So, pedant maybe, but for me while that's pretty damn thin, it's still three-dimensional.
Blame the bullshit and sensationalism that seems to have to accompany even new announcement today.
In a scientific article, can we just have the facts without the crap?
That would be a good new direction for
now get off my three-dimensional lawn!
Stopped reading. No. They might get the gates to switch faster but the reality is that before and after the gate electrons are on copper tracks and those are really the limiting factors in terms of maximum speed.
No, they will not make anything "100 times faster". The limiter today is interconnect and that does not get any faster at all with this material.
Most ACs are not even worth the keystrokes to insult them. Be generically insulted by this and ignored otherwise.
It's one of the limits; that speed goes along with a concept called 'mobility' which directly translates to better current-carrying capacity.
Higher mobility for p-type devices DEFINITELY would speed CMOS.
Since SnO is a p-type material, it could become half the circuitry of a CMOS IC, and because it is to be a layer atop (presumably silicon) other materials, it would make for lower silicon area for a given complexity. By using that third dimension, your interconnect wiring gets shorter and faster.
It's one of the limits;
Your reply isn't even even logically sufficient.
Here let me give you a car analogy.
You have a junker Saturn and put in a Ferrari's engine, then take it out onto I-95 during rush hour. The engine was never the limiting factor, the tires transmission, steering, and the highway were all the much greater limiting factors.
Are we talking about a 2D electron gas?
Those can already be made with compound semiconductors (GaN, GaAs), though it may be one or two layers thicker.
But it's very unclear how to integrate those materials with Silicon chips, so any new material is still intriguing.