Toshiba To Test Sub-25nm NAND Flash
An anonymous reader writes "Toshiba plans to spend about $159.8 million this year to build a test production line for NAND flash memory chips of less than 25 nanometers. The company hopes to kick off mass production of the chip as early as 2012. The fabrication facility for this key NAND flash memory will be located at Yokkaichi, Mie Prefecture."
I thought microSD was small. I'm going to lose this stuff for sure!
Give me Classic Slashdot or give me death!
Not everyone (including me) understands what the benefit to consumers will be when less than 25nm production is possible. Does that mean 1TB flash memory cards for my camera? Same sizes as now but cheaper? What? Just an additional sentence giving a "once possible, this will mean blah blah blah blah blah". Simple as that. Of course, with an 'article' (actually just PC Mag parroting a Thoshiba presser...for pay I'd imagine) as crappy as the one linked to in the headline, I don't know that it really matters.
I've got to admit that I don't really know much about the hardware side of tech and new advances in the shrinking of chip size, but what are the real benefits of shedding 7nm off the last smallest chip? It seems to me like a very marginal gain, unless I'm missing something fundamental about why one would want even smaller chip sizes.
Let me see how long it takes before this discussion degenerates into Toyota/anti-Toyota flame war.
Over the last decade, I keep seeing these manufacturing processes grow ever smaller. I still remember when I bought my Athlon FX-55. 130nm process. Aw hell yeah. It's currently living the remainder of its life in one of my guest boxes. God that chip was such a waste of money, but I digress.
For those in the know, this ever shrinking manufacturing process tech: when will it stop? Where will it stop? 10nm? Sub-1nm?
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Is there a proposed ultimate limit for lithography before one has to jump to molecular electronics? 25nm is well below what anyone though practical a decade ago (since it's so many times smaller than easily produced optical wavelengths). Now it's closing in on the limit of easily produced x-rays.
while the resolution of the smallest resolvable element is shrinking, is the utilization of area increasing proportionally. That is are we densely filling the area with 25nm structures or is that simply the finest linear element and these are well separated?
A 1cm chip would have 1E15 resolvable points at 0.025 micron resolution. And then there is the vertical resolution to multiply that. I should think it would become prohibitively difficult to design something with so many possibilities.
Some drink at the fountain of knowledge. Others just gargle.
Is this chip design somehow based on the NAND logic gate? How is it different from other chips? I couldn't tell from the article.
Does this mean cheaper SSD (and inevitably larger SSDs), then I could see a benefit to 25nm NAND flash memory.
4SF is pretty accurate for an 'about'. Why not 'About $160M".
Personally, while I find it interesting, I'd like to know just how much extra data storage this would enable?
32nm to 25 nm would, what, increase the theoretical max density of flash by 64%? IE instead of getting a 16GB chip you'd get a 24GB one.
At the same price once you have all the details worked out, of course.
45nm to 25 nm by my figuring would allow 3.24 times as much storage in a given size of chip.
I don't read AC A human right
Imperfect silicon wafers tend to have little dot-like blemishes. So there are points on wafers which spoil the chip that gets printed at that point.
As chips get smaller, more chips get printed on a wafer, but the count of blemishes (and thus spoiled chips) stays the same -- so as a percentage of chips on wafer, manufacturing reliability goes up.
One chip on a wafer with a blemish -- complete loss. .1% loss.
Two chips, one blemish -- 50% loss.
1000 chips, one blemish --
So smaller chips mean lower manufacturing costs, there, too.
HOWEVER, I suspect someone on this thread can tell us if the smaller wavelength process (25nm, here) causes imperfections which would otherwise have allowed the chip to work fine to become an important blemish.
Will chip failure count go up because of this new process?
Don't y'all be dissin on my one-world-government technology. Also the forehead model is the exact shape of my 666 ^h^h^h birthmark. And so forth.
So I don't think they've highlighted the move to extended UV (EUV) enough. What new wavelength of light are they using? The semiconductor industry has been stuck at 193nm for a long time now. If the industry moves to a smaller wavelength it's a pretty big deal. New wavelength means new lithography materials. It may not be interesting to those of you asking "what size hard drive does this mean?" but to those who know this stuff it's important.
For those unfamiliar with the field of semiconductor design, heres what the sizes mean. The Toshiba press release is about flash. In flash, the actual physical silicon consists of rectangular areas of silicon that have impurities added (aka. doped regions or wells). On top of these doped regions, are thinner parallel "wires" (narrower rectangles) made of poly silicon. The distance between the leading edge of wire and the next is called the pitch. Thus, the half pitch is half that distance. The reason this is important is that half pitch is usually the width of the polysilicon wire and effectively becomes the primary physical characteristic from the point of view of power consumption (leakage), speed and density.
The official roadmap for processes and feature sizes (called process nodes) are published yearly by the International Technology Roadmap for Semiconductors, a consortium of all the fabs. According to the 2009 lithography report. 25nm Flash is supposed to hit full production in 2012, thus inital deployments happen a couple of years before. Effectively Toshiba seems to be hitting the roadmap.
The takeaway being, theres nothing to see here, its progress as usual. The big problem is what happens under 16nm. Thats the point at which current optical lithography is impossible, even using half or quarter wavelength, and EUV with immersion litho.
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Micron and Intel previously announced 25nm flash. Toshiba is trailing badly. http://bit.ly/c6oOQW
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The article is frustratingly light on details. There's nothing about what type of flash transistor they're using (there are several variants on the basic stacked-gate NMOS design as well as more wild types). They don't say whether they're actually shrinking the bits (which you don't have to do) or just the support circuitry. All it says is that Toshiba is making NAND flash in a new process node, probably 22nm.
My day job is working with embedded NOR flash. I'm not really a process or solid state physics guy, but I think I know enough to comment, unlike a lot of the people running their mouths. (Seriously, folks, if you don't know what you're talking about, *shut up*. Misinforming people with wild guesses is not helpful, no matter how much it strokes your ego.)
First off, the flash transistor itself is not 22nm long. It's probably at least ten times longer, if not more (obviously Toshiba's not giving exact numbers). When you go to a new process node you don't necessarily shrink every feature by 50%. The limiting factor in flash size isn't lithography (manufacturing), it's leakage.
Flash works by storing electrons on an isolated (floating) material sandwiched inside an NMOS transistor. If extra electrons are present, the transistor is forced off (0). If they aren't, the transistor can turn on (1). The problem is that over time the electrons leak out of the floating gate, eventually causing bits to flip. If you shrink the circuit enough you hit a point where you can't keep electrons in the gate for a reasonable amount of time. At that point, we'll need a new memory technology -- maybe FRAM, maybe something else. Whatever it is, I'm sure it's been researched already -- a lot of the major research papers for flash memory are 25+ years old.
Also, I said this elsewhere, but NAND flash is called NAND because the flash transistors (bits) are in series, like the NMOS transistors in a NAND gate. It isn't made out of logic gates or anything like that. Flash memory is analog, like DRAM -- you need special analog circuitry to read it and output a digital signal.
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That "molecule" of silicon is a single crystal that goes from one side of the wafer to the other - perhaps about 300 millimetres.
Even in poorly funded labs for well over a decade people have been getting down to atomic scales where a single layer of another element can give a junction. The materials can do it but the problem is fabricating it.