New "PRAM" 30 Times Faster Than Flash
hairyfeet writes, "The EETimes describes the new Samsung memory, phase-change RAM, called PRAM. Samsung is dubbing it 'Perfect RAM' because it is thirty times faster than NOR flash, ten times more durable — and cheaper to produce, to boot." 512-Mbit modules should be available sometime in 2008. None of the initial coverage goes much beyond Samsung's press release. At the same time, Samsung also announced a 40-nm, 32-Gbit NAND flash device.
It sounds like great marketing and all using the name "PRAM" for "Perfect RAM". However, can anybody tell me what, if any, advantages that this design has over MRAM? I'm all for a replacement of flash, given all of its disadvantages, but I would like to avoid a format war if one format between these two is clearly superior to the other.
A community-oriented lyrics site
1. Someone's getting their MBits and GBits mixed up. Samsung has announced 32-gigabit (4GB) flash chips, not 32 megabit.
2. NAND has traditionally been shunned in many uses because it can usually only be accessed as a block device, and not a standard ROM device. Which makes it unsuitable for many embedded applications. Thus this chip is probably targetted at the thumb drive market.
3. This is exciting stuff! According to the article, PRAM is supposed to have processing speeds similar to RAM, and does not require erasure or sectoring. The only downside is that they don't give any hard figures on what "fast processing speed" means. Depending on what that actually means, we could start seeing machines that are able to instantly hibernate like EROS, but without the added step of writing to disk.
4. The 512 MBit (64MB) device may sound small, but I imagine that more than one chip will be chained together to create a larger storage device. Samsung will probably also work to produce larger chips once they have all the early production issues worked out.
5. The CIO article is already slow, so I'll add one tidbit they had. According to CIO, Samsung is considering PRAM to be a good fit for replaceing Flash memory in mobile phones. Considering the lower price, this could be a good fit. The only question is, does it use more or less power during read/write cycles?
Javascript + Nintendo DSi = DSiCade
Cause I'm sick of how long it takes to load those damn Flash ads that hang over my browser window.
cheaper to produce, to boot.
Yea but since it is "better than flash" they can charge more for it and just get much larger profits. I hate hate hate how companies throw on "new technology" surcharges even when it costs less than the old tech to produce.
dont mind me I am just bitter today.
Dooom
I have to push the PRAM-a-lot!
The Cheese Stands Alone.
Since a pram is generally used at walking speed, doesn't anyone think of the baby's safety when it's rolling 30 times faster, i.e., 90 miles/hr or 145kph?
Think of the children!
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BMO
PRAM is Parameter RAM in Apple Macs, and that's a vital part of the computer (well, logic board). Maybe Apple will start using PRAM for its PRAM?
'Yes, firefox is indeed greater than women. Can women block pops up for you? No. Can Firefox show you naked women? Yes.'
Sorry to rain on the parade.
"So l toasted the dated directory, tweaked the P-RAM ... and reglazed your subroutine."
- Pauly Shore
Your PC got harshed, right, 'cause your
system heaps at the wrong parameter.
So l toasted the dated directory,
tweaked the P-RAM...
and reglazed your subroutine.
- Crawl, in "Son In Law" (Pauly Shore)
RudeDude
Perl/Linux/PHP hacker
I doubt it will do either of those. I'm more worried about lifetime and corrupt bits.
What I really want is not more super-duper fast RAM but real cheap and abundance of FLASH - to replace (at least partially) hard-drive. Not only performance but reliability will be better for a system overall.
Just when we start to worry that we've hit a wall in our attempts to grow, somebody goes and cuts a completely unexpected doorway in it.
Same thing happened with telecommunications vis-a-vis wireless.
I'm looking forward to something similar happening with domestic power generation and distribution.
FATMOUSE + YOU = FATMOUSE
Some day this might very well be the next big thing. But I wouldn't take the manufacturers word as the gospel for when it's going to arrive. And it really has to be cheaper to replace flash memories en masse. Flash is good enough for phones, memory cards etc. The new tech doesn't solve any obvious fundamental flaw (100 000 read/write cycles is still enough for most applications)
t ml?articleID=192700864.
Compare with SED displays. We all want them (if they're not much more expensive than our current ones). But it's been slipping a bit. For now it looks it will arrive in 2008 in the mass markets according to Canon chairman Mitarai (Canon and Toshiba is working together on this). And I don't think he's being conservative. (The reason given for the delay is that "we have not yet established the manufacturing technology for mass-producing SEDs at low cost," Source: http://www.eetimes.com/news/latest/showArticle.jh
Jay Garrick I can see, and maybe Barry Allen and Bart Allen, but Wally West was boo-koo speedy.
PRAM is Parameter RAM in Apple Macs, and that's a vital part of the computer (well, logic board). Maybe Apple will start using PRAM for its PRAM?
Yeah I was kinda wondering about that...
Besides, isn't "Perfect" RAM a little arrogant? What do they call the next stuff, "Super-Perfect", "Ultra-Perfect", "Mega-Perfect", "Super-Duper"?
Magic doesn't work in my presence. My power of disbelief is too strong.
Everyone here should have a general idea, what Flash-Memory is. PRAM, on the other hand...
Posting anonymously, as otherwise it would fall under the term of "Karma whoring": "Often these will be needless information (such as a link to a Wikipedia article relevant to the subject being discussed)..."
Sorry, for being so blatantly direct...
More immediately, this announcement means that Flash prices should start dropping even more. Maybe not to $0.25:GB like desktop HDs today, but maybe $2:GB (instead of today's $16:GB), for mobiles. When they release PRAM devices in 2008, they'll sell them for much more money than Flash because of the speed, but start dropping prices faster because of the cheaper manufacturing. By the time PRAM costs $2:GB, they'll be dumping Flash for $0.25:GB. HDs will probably cost $10:TB, if they're used outside datacenters at all, maybe sometime around 2010-2.
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make install -not war
Go BABY, Go!
pram powns 'puters
God spoke to me.
c.f. 18 for the phone memory.
Maybe if (a big if, I know) this technology does actually deliver, we may see the same kind of tech. leap in the next 15 years.
By then the biggest problem would be losing - literally - all your data.
That's progress.
politicians are like babies' nappies: they should both be changed regularly and for the same reasons
The format war would take place with manufacturers and memory producers. Consumers will likely never install pram or mram into their computers just like they don't install flash now. The only time you might buy pram would be a USB flash device, and that already has the standard interface of USB. So really there's no reason consumers would ever have to choose one technology pathway or another. Manufacturers would have to choose, but they're much better prepared to switch technologies and avoid having dead-end technology (they really do this all the time when it makes economic sense).
AccountKiller
...but does it run Linux?
When can we get portable battery-backed DDR?
Goten Xiao
Cheaper to produce, my ass. They'll be charging an arm and a leg for this type of memory.
Wow. I'll believe it when I see its "perfection" :p
(quick montage of knights dancing and kicking chickens)
No, on second thought, let's not go to Camelot. It is a silly place.
Towards the Singularity.
Storage should be stated in megaBYTES and gigaBYTES not bits. No one uses bits anymore, we've all upgraded to bytes. Then there was that half standard of nibbles, what the heck was that all about.
FTA:
You decide.
File under 'M' for 'Manic ranting'
As in Parameter RAM? As in "a small amount of NVRAM used on early Apple Macintosh machines to store configuration information"?
will we have to call them "pr0m" disks?
They've never seen me on a crowded pier in a trench coat!
.
.
I speak for all Mac geeks when I say, ugh, "PRAM."
1 94
http://docs.info.apple.com/article.html?artnum=86
Couldn't they pick an acronym that's not already being used?
"Things are more moderner than before- bigger, and yet smaller- it's computers-- San Dimas High School football RULES!"
If all is true in this story we can wave goodbye to Spansion. ...what? 30-times faster, cheaper to make and more reliable, but it's only "more competitive"?
But the artical is a bit inconsistant on some details...
for instance they say it's 30 times faster than NOR (but they don't say if this is read or write speed)
and then they say it's more reliable than flash (but they don't say if it's more reliable than NOR or NAND)
Then they say "Samsung claimed the PRAM would become a competitive choice over NOR flash"
This leads me to think that there must be some strings attached that they are not telling us about
Oddly enough, I'm reminded of the term "pramalot".
Why even talk about binary storage methods in bits? All of us endusers only know bytes, and it's a significant imposition to make us multiply or divide by eight to get anything useful. It's not like you're storing your information as individual bits of...oh...right. :rolleyes:
Is it just my observation, or are there way too many stupid people in the world?
Interesting.
... and then they built the supercollider.
There are only so many three letter acronyms to go around. Same goes for fourth letter enhanced acronyms. We have to double up on them somewhere.
When our name is on the back of your car, we're behind you all the way!
the sound of...
Is it just my observation, or are there way too many stupid people in the world?
But is it faster than Superman?
You've just been waiting, haven't you?
MRAM, OTOH, does have read limitations too making it poor for execute in place applications. MRAM is also expensive (per byte) and not very dense, making it useless for most typical flash applicaitons.
At this stage NAND is the prefered flash for large arrays and file system applications because it is cheap, dense and very fast, but it cannot do execute in place. NOR is prefered for smaller applications, or where execute in place is desirable (boot code, and some other applications).
Will PRAM make a big difference? We'll see.
Engineering is the art of compromise.
...still work, too. I know all my older HDDs are still quite functional.
Good question. Not sure of all the answers, but I'll help as much as I can.
First off, PRAM = Phase change RAM.
PRAM is a writable DVD on a chip. It works by heating and cooling material at different rates. By annealing the stuff appropriately, you can cause it to enter either an amorphous or a crystaline state. These two states differ in two ways: Reflectivity and conductivity. You can read and write either with an optical or an electrical system. On a DVD-R, you write a bit by heating with a laser; you read a bit by bouncing a laser off; if it's crystaline stuff you're hitting, it bounces off like a mirror; if it's amorphous, you get less back. On a PRAM chip, this stuff is lined up in an array of cells; you write by heating a cell with a pulse of current shaped to give the correct cooling profile, and you read, in essence, with an ohm-meter.
All that heating sounds like it sucks a lot of power. But then, MRAM requires pretty substantial currents to generate the magnetic fields required to flip the magnets as well, so power consumption on both PRAM and MRAM are, as far as I know, actually about the same.
PRAM does have the advantage of multi-level recording. In my earlier description, I implied that a cell is either entirely in the amorphous state or the crystaline state. In fact, some percentage of the cell is in one state and some percentage is in the other. It is possible, then, to with four levels store two bits in a single cell. I overheard people talking about a 16-level four-bit cell the other day. You can't do that with MRAM.
Nevertheless, they're both contenders, and as far as I know neither is clearly superior. Some companies are researching both.
Also, neither will ever be the "Perfect RAM." Neither will oust DRAM for density or SRAM for speed.
(Whosoever knows more than the above is invited to post a reply.)
This new type of memory is at least as fast, if not faster than Sigourney Weaver, but only when SLIME is installed.
Although someone else posted it - but have a score of 0 presently and are probably filtered by most people - the wikipedia entry for this type of memory is: http://en.wikipedia.org/wiki/Phase-change_memory
p hase-change%20random%20access%20memory%20reliabili ty%22
I did a literature search on this type of memory, and found a paper by Samsung on a 64-Mb PRAM published earlier this year.
"Enhanced write performance of a 64-mb phase-change random access memory"
Hyung-rok Oh; Beak-hyung Cho; Woo Yeong Cho; Sangbeom Kang; Byung-gil Choi; Hye-jin Kim; Ki-sung Kim; Du-eung Kim; Choong-keun Kwak; Hyun-geun Byun; Gi-tae Jeong; Hong-sik Jeong; Kinam Kim; Solid-State Circuits, IEEE Journal of, Volume 41, Issue 1, Jan. 2006 Page(s):122 - 126
My summary:
The 64-Mb PRAM was produced on a 0.12um CMOS technology, and had a voltage of 1.8V. The "0" resistance is 1.2kohms, "1" resistance is 100kohms (a nice delta which could mean that you could use the cell to store intermediate states ie. 4-states per cell, instead of just 2 (binary) ). Random access time is 68ns, and write time is 180ns, at 1.8V at room temperature.
This abstract at the Japanese Journal of Applied Physics seems to be on a similar 64-Mb chip from Samsung (although some details are different):
"Ge2Sb2Te5 Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory", Fai Yeung*, Su-Jin Ahn, Young-Nam Hwang, Chang-Wook Jeong, Yoon-Jong Song, Su-Youn Lee, Se-Ho Lee, Kyung-Chang Ryoo, Jae-Hyun Park, Jae-Min Shin, Won-Cheol Jeong, Young-Tae Kim1, Gwan-Hyeob Koh, Gi-Tae Jeong, Hong-Sik Jeong and Kinam Kim,
http://jjap.ipap.jp/link?JJAP/44/2691/#search=%22
Cutting and pasting the abstract:
Phase-change random access memory is considered a potential challenger for conventional memories, such as dynamic random access memory and flash memory due to its numerous advantages. Nevertheless, high reset current is the ultimate problem in developing high-density phase-change random access memory (PRAM). We focus on the adoption of Ge2Sb2Te5 confined structures to achieve lower reset currents. By changing from a normal to a GST confined structure, the reset current drops to as low as 0.8 mA. Eventually, our integrated 64 Mb PRAM based on 0.18 m CMOS technology offers a large sensing margin: Rreset 200 k and Rset 2 k, as well as reasonable reliability: an endurance of 1.0×109 cycles and a retention time of 2 years at 85C.
1E9 cycles is pretty impressive.