Neither of the linked articles contains the information in the summary. I was not able to find this information in any other articles during a search either. Regardless of who assassinated the man, this particular summary on slashdot seems to be nothing but a provocation. Editors, RTFA before posting!
The inter-metal-layer oxide that is begin replaced by low-K dielectrics is/was not formed by oxidation but by chemical vapour deposition. This oxide process is targetted at gate or isolation dielectrics. High-K dielectrics are in the roadmap to replace oxide at the gate dielectric, but development is much slower than people thought 5-6 years ago. In fact, it may never happen before we switch to different materials altogether.
Re:it's a contract dispute, not trademark
on
On Apple vs Apple
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· Score: 2, Insightful
However, we do have statements from Apple Comp's lawyer saying that data transmission and distribution of digital entertainment content are explicitly permitted under the agreement. If this is true, then Apple Corp's case is not so obvious, since Apple Comp is only reselling data and generally doing so under a separate trade name (iTunes).
There are two techniques that may solve the heat problem in principle. First, the through-wafer vias that connect the various chip levels together may also be applied as heat conduits from a higher to a lower level. Second, it is believed (and simulated) that a 3-D structure can allow more intelligent placement and routing of processor units, thereby avoiding the current situation where some particular area of the chip runs very hot and is the failure mechanism. Therefore, the average temperature of the chip may be slightly higher, but the temperature variation around the chip may be lower, leading to more stable behaviour.
You will always dissipate I^2xR power (as heat) through your wires. Therefore, for a given clock speed and capacitance a decrease in resistance will lead to a decrease in power. However, the power lost in the lines is extremely small compared to the power dissipated in the transistors, i.e. dumped in and out of the node capacitances.
Each party individually does not have the power to bring down the government. If the Conservatives and the Bloq voted together, that would be enough. Unfortunately for the NDP, they do not have enough votes to swing a non-confidence motion in one direction or the other. The only reason anyone cares about them is that the Liberals hope to take some of their voters in the next election (or simply have those voters stay home, almost as good a solution).
I was refering to the original statement that the Napster folks are pointing out that you can do the same analog trick with iTunes. That is however a false argument since you have the ability to burn a CD in iTunes without going to that trouble (i.e. it is a bit of FUD on Napster's part).
It is not a duplicate. Intel published a Nature not long ago using the same structure but in pulsed mode. This time it is operating in CW. Of course, one could argue that Intel is being academically dishonest by publishing very similar results on an identical structure twice (in the same journal!), but that's another story.
The trick is that the 30% figure (vs 6% for existing polymers quoted in the article) is just an expression of the longest wavelength that they are able to absorb (and an integration of the sun's emission spectrum from zero to that wavelength). The actual quantum efficiency of the devices is very low, though according to the article this work is a couple of order of magnitudes better than the previous best.
In any case, this material is far inferior to what is already available in terms of quantum efficiency (and has very high dark current as an additional problem), and it is not at all clear that "improvements in efficiency" will ever materialise to get us where we want to go (at least with these materials). Still some pretty interesting science and engineering, but certainly nothing that will save the world in the next 5 years.
Well, I may be remembering this incorrectly, but I think one of the barriers for GaAs, besides being a more expensive material, is that when you oxidize GaAs, you get something which is water-soluable.
No, you are thinking of Ge. The problem with GaAs is that the native oxide interface is full of surface states which gives you a transistor that is normally on rather than one which is normally off (which is what you want for CMOS). The transistors (MESFETS or HBTs) that you fab on GaAs are fine for analog applications, but have a static power dissipation problem that makes them bad for logic.
Copper is used for interconnect on the chip (and many people use it now, not just IBM). This article talks about using a metal as the gate electrode, which is these days made of heavily doped polysilicon. Copper will definitely not work for this purpose.
There is no alloying in thermocouples. Two different metals are welded together at the measuring point. It operates on the principle that a predictable voltage is generated that relates the temperature of the measuring junction to the reference junction (i.e. the connection to the measuring device).
The difference between the metal and semiconductor work functions sets the point at which you start off. You then need to apply a voltage to raise or lower the metal potential in order to reach inversion (turn-on).
That is the truth...remember the HUGE buzz on slashdot (running at a couple of articles a week for a while) about Dataplay? It was and is all vapour, just like this announcement.
No, the bandgap of GaAs is larger than that of Si, meaning its absorption coefficient falls off at shorter wavelengths than that of Si (roughly 900nm for GaAs, 1100 for Si). You are thinking of InGaAs, which is the material used to detect 1.55um signals...but that is grown lattice-matched to InP, not GaAs.
Of course direct vs. indirect bandgap also plays an important role in determining efficiency.
Wow, sorry but I need to correct you on a bunch of points.
Gallium Arsenide (not gallium) is used to make a variety of LED and semiconductor lasers. Silicon is unattractive for light-emitting applications because it has an indirect bandgap, making emission of photons much less efficient than in direct bandgap materials.
Making large wafer of GaAs is not so much a processing issue as a cost issue (i.e. how much would one wafer end up having to sell for, and would anyone at all even think of dropping that much money on one). HOWEVER, neither GaAs nor its native oxide(s) are liquid or even water-soluble at room temperature. You were perhaps thinking of Germanium. The problem with GaAs oxides is that they do not form into such nice layers as SiO2, and that they do not effectively passivate the GaAs surface such that MOSFETs cannot be fabricated. GaAs (and InP) and still widely used (in your cellphone for example), but in different ways than silicon and not nearly as widely as silicon.
First, if you got the phone directly from Voicestream then it is definitely locked. Call customer service and explain that you would like to have the phone unlocked so that you can use a different SIM in a different country. As long as you still have a few months left on your contract (and you tell them how happy you are with your service), they will be happy to give you the code to unlock it. That's all it takes... I also have the T28 and did exactly that, and it works fine.
I hope that this discussion motivates people to switch to Voicestream. They are the network that most "gets it" of all of them.
You are exactly right, but I agree with the parent post that to come out and call this service "3G" is misleading since it only implements part of the standard. Really it is much closer to what the rest of the world is calling 2.5G. Journalists and marketing departments should refer to it as such, otherwise there will be serious confusion when a real 3G solution is offered.
Before telling people what is and is not revolutionary, please try to figure out what you are talking about.
There is no such thing as a Peltier junction. Any p-n junction will have a temperature gradient across it with an applied voltage, and by symmetry every junction will have a voltage induced across it with an applied temperature gradient.
The work in question really is revolutionary as they have played some very complicated tricks that maybe do not come through in the press release to get their increased efficiency which are very clever indeed. The real question is whether these things can actually be produced in any quantity without breaking the bank. My feeling is that the only application for these things will be military.
Slashdot Mirror
Neither of the linked articles contains the information in the summary. I was not able to find this information in any other articles during a search either. Regardless of who assassinated the man, this particular summary on slashdot seems to be nothing but a provocation. Editors, RTFA before posting!
The inter-metal-layer oxide that is begin replaced by low-K dielectrics is/was not formed by oxidation but by chemical vapour deposition. This oxide process is targetted at gate or isolation dielectrics. High-K dielectrics are in the roadmap to replace oxide at the gate dielectric, but development is much slower than people thought 5-6 years ago. In fact, it may never happen before we switch to different materials altogether.
However, we do have statements from Apple Comp's lawyer saying that data transmission and distribution of digital entertainment content are explicitly permitted under the agreement. If this is true, then Apple Corp's case is not so obvious, since Apple Comp is only reselling data and generally doing so under a separate trade name (iTunes).
There are two techniques that may solve the heat problem in principle. First, the through-wafer vias that connect the various chip levels together may also be applied as heat conduits from a higher to a lower level. Second, it is believed (and simulated) that a 3-D structure can allow more intelligent placement and routing of processor units, thereby avoiding the current situation where some particular area of the chip runs very hot and is the failure mechanism. Therefore, the average temperature of the chip may be slightly higher, but the temperature variation around the chip may be lower, leading to more stable behaviour.
You will always dissipate I^2xR power (as heat) through your wires. Therefore, for a given clock speed and capacitance a decrease in resistance will lead to a decrease in power. However, the power lost in the lines is extremely small compared to the power dissipated in the transistors, i.e. dumped in and out of the node capacitances.
Each party individually does not have the power to bring down the government. If the Conservatives and the Bloq voted together, that would be enough. Unfortunately for the NDP, they do not have enough votes to swing a non-confidence motion in one direction or the other. The only reason anyone cares about them is that the Liberals hope to take some of their voters in the next election (or simply have those voters stay home, almost as good a solution).
I was refering to the original statement that the Napster folks are pointing out that you can do the same analog trick with iTunes. That is however a false argument since you have the ability to burn a CD in iTunes without going to that trouble (i.e. it is a bit of FUD on Napster's part).
iTunes already lets you burn a CD of your downloaded files, so what would be the point of recording the analog output?
It is not a duplicate. Intel published a Nature not long ago using the same structure but in pulsed mode. This time it is operating in CW. Of course, one could argue that Intel is being academically dishonest by publishing very similar results on an identical structure twice (in the same journal!), but that's another story.
The answer is in the New Scientist article: the material is difficult and very expensive to grow at the moment and for the foreseeable future.
The trick is that the 30% figure (vs 6% for existing polymers quoted in the article) is just an expression of the longest wavelength that they are able to absorb (and an integration of the sun's emission spectrum from zero to that wavelength). The actual quantum efficiency of the devices is very low, though according to the article this work is a couple of order of magnitudes better than the previous best.
In any case, this material is far inferior to what is already available in terms of quantum efficiency (and has very high dark current as an additional problem), and it is not at all clear that "improvements in efficiency" will ever materialise to get us where we want to go (at least with these materials). Still some pretty interesting science and engineering, but certainly nothing that will save the world in the next 5 years.
Well, I may be remembering this incorrectly, but I think one of the barriers for GaAs, besides being a more expensive material, is that when you oxidize GaAs, you get something which is water-soluable.
No, you are thinking of Ge. The problem with GaAs is that the native oxide interface is full of surface states which gives you a transistor that is normally on rather than one which is normally off (which is what you want for CMOS). The transistors (MESFETS or HBTs) that you fab on GaAs are fine for analog applications, but have a static power dissipation problem that makes them bad for logic.
You forgot the 2 biggest software companies: Cognos and GEAC. Even in its prime, Corel was smaller than those.
Copper is used for interconnect on the chip (and many people use it now, not just IBM). This article talks about using a metal as the gate electrode, which is these days made of heavily doped polysilicon. Copper will definitely not work for this purpose.
There is no alloying in thermocouples. Two different metals are welded together at the measuring point. It operates on the principle that a predictable voltage is generated that relates the temperature of the measuring junction to the reference junction (i.e. the connection to the measuring device).
The difference between the metal and semiconductor work functions sets the point at which you start off. You then need to apply a voltage to raise or lower the metal potential in order to reach inversion (turn-on).
That is the truth...remember the HUGE buzz on slashdot (running at a couple of articles a week for a while) about Dataplay? It was and is all vapour, just like this announcement.
Airports!! Amsterdam and Boston come to mind right away, but I am sure that I have seen it in other places.
No, the bandgap of GaAs is larger than that of Si, meaning its absorption coefficient falls off at shorter wavelengths than that of Si (roughly 900nm for GaAs, 1100 for Si). You are thinking of InGaAs, which is the material used to detect 1.55um signals...but that is grown lattice-matched to InP, not GaAs.
Of course direct vs. indirect bandgap also plays an important role in determining efficiency.
Wow, sorry but I need to correct you on a bunch of points.
Gallium Arsenide (not gallium) is used to make a variety of LED and semiconductor lasers. Silicon is unattractive for light-emitting applications because it has an indirect bandgap, making emission of photons much less efficient than in direct bandgap materials.
Making large wafer of GaAs is not so much a processing issue as a cost issue (i.e. how much would one wafer end up having to sell for, and would anyone at all even think of dropping that much money on one). HOWEVER, neither GaAs nor its native oxide(s) are liquid or even water-soluble at room temperature. You were perhaps thinking of Germanium. The problem with GaAs oxides is that they do not form into such nice layers as SiO2, and that they do not effectively passivate the GaAs surface such that MOSFETs cannot be fabricated. GaAs (and InP) and still widely used (in your cellphone for example), but in different ways than silicon and not nearly as widely as silicon.
NA is not hesitant, it just has not finished testing and has not had time to get in touch with the police yet...but they plan to.
You would know this if you had READ THE ARTICLE.
That may be his title, but look one line up to check his department... That should eliminate all doubt.
First, if you got the phone directly from Voicestream then it is definitely locked. Call customer service and explain that you would like to have the phone unlocked so that you can use a different SIM in a different country. As long as you still have a few months left on your contract (and you tell them how happy you are with your service), they will be happy to give you the code to unlock it. That's all it takes... I also have the T28 and did exactly that, and it works fine.
I hope that this discussion motivates people to switch to Voicestream. They are the network that most "gets it" of all of them.
You are exactly right, but I agree with the parent post that to come out and call this service "3G" is misleading since it only implements part of the standard. Really it is much closer to what the rest of the world is calling 2.5G. Journalists and marketing departments should refer to it as such, otherwise there will be serious confusion when a real 3G solution is offered.
Before telling people what is and is not revolutionary, please try to figure out what you are talking about.
There is no such thing as a Peltier junction. Any p-n junction will have a temperature gradient across it with an applied voltage, and by symmetry every junction will have a voltage induced across it with an applied temperature gradient.
The work in question really is revolutionary as they have played some very complicated tricks that maybe do not come through in the press release to get their increased efficiency which are very clever indeed. The real question is whether these things can actually be produced in any quantity without breaking the bank. My feeling is that the only application for these things will be military.